Chemical vapor deposition- principles and implementation Research Paper

Chemical vapor deposition- principles and implementation - Research Paper ExampleCVD has abundant applications which include provision of wear and corrosion resistance, formation of barriers and net shape components. INTRODUCTION Chemical evaporation Deposition (CVD) is a versatile proficiency of applying required coats of metals on surfaces of components. Unlike other personas of painting techniques, this technique applies a coat of the wanted solid on all the accessible surfaces of a component. This therefore makes this technique very appropriate for coat application on surfaces which be of unorthodox nature. In this report, the principles and implementation of CVD are examined. In examining the principles of CVD, the CVD process is closely examined by specifically discussing what takes place inside the reaction chamber of a CVD reactor. The types of CVDs are as well as discussed. On the second part of this report, the implementation of CVD is discussed whereby the complete e quipment cast for typical CVD set up is examined. The types of CVD reactors and the applications of CVD are also discussed. PRINCIPLES OF CVD Under this section, the principles of CVD are examined. Specifically, the CVD process is discussed and types of CVDs are also examined. CVD Process The rudimentary principle of the CVD process is the reaction of gaseous precursors to form a solid coating on a heat substrate (ATL 1). This process takes place in the reaction chamber located inside the CVD reactor. ... The temperature give depend on the level of coating required, the gaseous precursors involved and the substrate type. After the substrate has been heated to the required temperature, a controlled gaseous precursor (from the left in the above diagram Fig. 1) is introduced into the gas chamber. The type of gaseous precursor to be used will depend on the type of deposit required. check 2 (ULTRAMET 1) For illustration purpose if metal M is to be deposited on the surface of a sub strate, thusly a gaseous precursor such as MCl2 can be used. It is imperative that the precursor has to be in a gaseous form. After introducing a controlled settle of MCl2 gas, a controlled flow of hydrogen is also introduced. The mixture conditions are adjusted in such a manner that the mixture only reacts when in contact with the substrate surface (ATL 2). MCl2 + H2 = M + 2HCl The reaction on the surface of the substrate releases the metal pinpoint and exhaust gas hydrogen chloride. The metal atom is bonded on the surface of the substrate while the absquatulate gas is drawn out of the reaction chamber by use of a vacuum pump. In the schematic diagram above (Fig 1) the gas is removed to the right. The vacuum pump creates a constant flow of reacting gases into the chamber and waste gases out of the chamber (ATL 3). At the start of the reaction process, the metal deposition is situate (deposited on particular points on the substrate) but as the process progresses the atoms are e venly deposited all everywhere the surface of the substrate. The deposition of the metal applies to all the accessible surfaces of the substrate no matter what shape the substrate has. The process is allowed to progress until the desired thickness of the metal is achieved. In some cases the coating is left to